The FDS2570 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 150V and a continuous drain current of 4A. It features a drain to source resistance of 80mR and a power dissipation of 2.5W. The device is packaged in a SOIC package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOIC
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS2570 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 80mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS2570 Datasheet
Download the complete datasheet for Onsemi FDS2570 to view detailed technical specifications.
No datasheet is available for this part.