
N-Channel PowerTrench® MOSFET, single element configuration, designed for surface mount applications. Features a 200V drain-to-source breakdown voltage and a maximum continuous drain current of 3A. Offers a low drain-source on-resistance of 130mΩ at a gate-source voltage of 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in SOIC for tape and reel delivery, with lead-free and RoHS compliance.
Onsemi FDS2670 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 130MR |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.228nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 200V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS2670 to view detailed technical specifications.
No datasheet is available for this part.
