N-channel MOSFET, 100V drain-source breakdown voltage, 6.7A continuous drain current, and 26mΩ maximum drain-source on-resistance. Features a 20V gate-source voltage rating, 2.714nF input capacitance, 24ns fall time, and 49ns turn-off delay time. Operates within a temperature range of -55°C to 150°C with a 3W maximum power dissipation. Surface mountable in an 8-SOIC package, this RoHS compliant component is supplied on tape and reel.
PackageSOIC
Current Rating6.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3170N7 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | 6.7A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.714nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 49ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3170N7 Datasheet
Download the complete datasheet for Onsemi FDS3170N7 to view detailed technical specifications.
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