N-Channel PowerTrench® MOSFET, single element configuration, featuring 80V drain-source breakdown voltage and 4A continuous drain current. Offers 70mΩ drain-source resistance (Rds On Max) and 1W maximum power dissipation. Designed for surface mounting in an SOIC package, this component operates within a temperature range of -55°C to 150°C. Includes 4ns fall time and 7ns turn-on delay time.
PackageSOIC
Current Rating4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3512 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 80V |
| Element Configuration | Single |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 634pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 80V |
| Weight | 0.13g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3512 Datasheet
Download the complete datasheet for Onsemi FDS3512 to view detailed technical specifications.
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