N-Channel MOSFET, single element configuration, featuring 80V drain-source breakdown voltage and 7.6A continuous drain current. Offers a maximum drain-source on-resistance of 29mΩ at 10Vgs. Designed for surface mounting in an SOIC package, this component operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay time of 13ns and fall time of 16ns.
PackageSOIC
Current Rating7.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3580 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.6A |
| Current Rating | 7.6A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 29mR |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 7.535nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 80V |
| Weight | 0.13g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3580 Datasheet
Download the complete datasheet for Onsemi FDS3580 to view detailed technical specifications.
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