Surface mount N-channel dual MOSFET with 100V drain-source breakdown voltage and 1.3A continuous drain current. Features 480mΩ drain-source resistance at 10V gate-source voltage, 20V maximum gate-source voltage, and 175°C maximum operating temperature. Delivers 2W power dissipation and is packaged in SOIC for tape and reel distribution. Ideal for power switching applications requiring fast switching speeds with typical fall time of 6ns and turn-on delay of 8ns.
PackageSOIC
Current Rating1.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3601 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.3A |
| Current Rating | 1.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Dual |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 153pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 480mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 100V |
| Weight | 0.2304g |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS3601 Datasheet
Download the complete datasheet for Onsemi FDS3601 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.