Dual N-channel MOSFET, 80V drain-source breakdown voltage, 3.4A continuous drain current. Features 74mΩ maximum drain-source on-resistance and 634pF input capacitance. Operates with a 20V gate-source voltage and offers a maximum power dissipation of 900mW. Packaged in an 8-pin SOIC for surface mounting, this lead-free and RoHS compliant component is supplied on tape and reel.
PackageSOIC
Current Rating3.4A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS3812 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | 3.4A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 634pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 74mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3812 Datasheet
Download the complete datasheet for Onsemi FDS3812 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.