Dual N-Channel MOSFET, 80V Vds, 4.7A continuous drain current. Features 44mΩ maximum drain-source on-resistance. Operates with a 20V gate-source voltage and a 2.3V threshold voltage. Packaged in SOIC for surface mounting, with a 2W maximum power dissipation. Includes 1.18nF input capacitance and fast switching times (11ns turn-on, 12ns fall, 26ns turn-off). RoHS compliant and suitable for operation from -55°C to 175°C.
PackageSOIC
Voltage80V
Current47A
Current Rating4.7A
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Technical Specifications
Onsemi FDS3890 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current | 47A |
| Current Rating | 4.7A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 44MR |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 1.18nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 2.3V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| Voltage | 80V |
| DC Rated Voltage | 80V |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS3890 Datasheet
Download the complete datasheet for Onsemi FDS3890 to view detailed technical specifications.
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