Dual N-Channel Power MOSFET, surface mountable in an SOIC package. Features 100V Drain to Source Breakdown Voltage and 3A Continuous Drain Current. Offers low 125mR Drain to Source Resistance and 2W Power Dissipation. Operates across a wide temperature range from -55°C to 175°C.
PackageSOIC
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS3912 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Dual |
| Fall Time | 4.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 632pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 125mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8.5ns |
| DC Rated Voltage | 100V |
| Weight | 0.2304g |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS3912 Datasheet
Download the complete datasheet for Onsemi FDS3912 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.