ONSEMI

FDS4410

Datasheet

N-CH JFET, 30V, 10A, 9.8mR, SOIC, Logic Level, PWM

Onsemi

FDS4410

Name: FDS4410 Onsemi
Brand: Onsemi
SKU: FDS4410

N-CH JFET, 30V, 10A, 9.8mR, SOIC, Logic Level, PWM

Single N-Channel Logic Level MOSFET, optimized for PWM applications, features a 30V Drain to Source Breakdown Voltage and a low 9.8mR Drain to Source Resistance at a 10A continuous drain current. This surface mount SOIC package component offers a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 1.34nF input capacitance, 10ns fall time, and 38ns turn-off delay time, with a maximum Gate to Source Voltage of 20V.

PackageSOIC

Current Rating10A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDS4410 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	10A
Current Rating	10A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	9.8mR
Drain to Source Voltage (Vdss)	30V
Element Configuration	Single
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	1.34nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	13.5mR
Series	PowerTrench®
Turn-Off Delay Time	38ns
DC Rated Voltage	30V
Weight	0.13g