N-channel MOSFET with 30V drain-source breakdown voltage and 10A continuous drain current. Features low 13.5mΩ drain-source resistance (Rds On Max) and 9ns turn-on delay. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 2.5W. Packaged in an 8-pin SOIC N surface-mount configuration, supplied on tape and reel.
PackageSOIC N
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS4410A technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.205nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4410A Datasheet
Download the complete datasheet for Onsemi FDS4410A to view detailed technical specifications.
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