P-Channel MOSFET featuring a -30V Drain to Source Breakdown Voltage and 8.8A Continuous Drain Current. Surface mountable in an SOIC package, this single element transistor offers a low 20mR Drain-source On Resistance. Ideal for power applications, it operates within a -55°C to 175°C temperature range with a 2.5W maximum power dissipation. The device exhibits a 25ns fall time and 42ns turn-off delay time.
PackageSOIC
Current Rating-8.8A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS4435 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.8A |
| Current Rating | -8.8A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.604nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 42ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS4435 Datasheet
Download the complete datasheet for Onsemi FDS4435 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
