P-Channel MOSFET featuring a -30V Drain to Source Breakdown Voltage and 8.8A Continuous Drain Current. Surface mountable in an SOIC package, this single element transistor offers a low 20mR Drain-source On Resistance. Ideal for power applications, it operates within a -55°C to 175°C temperature range with a 2.5W maximum power dissipation. The device exhibits a 25ns fall time and 42ns turn-off delay time.
PackageSOIC
Current Rating-8.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4435 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.8A
Current Rating
-8.8A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
20MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
25ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.604nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.7V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Rds On Max
20mR
Reach SVHC Compliant
No
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-1.7V
Turn-Off Delay Time
42ns
DC Rated Voltage
-30V
Weight
0.13g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FDS4435 Datasheet
Download the complete datasheet for Onsemi FDS4435 to view detailed technical specifications.
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