P-channel JFET transistor in SOIC package, designed for surface mount applications. Features a continuous drain current of 9A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 17mΩ at a nominal Vgs of -1.7V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with a turn-on delay of 12ns and a fall time of 55ns. This RoHS compliant component is suitable for various electronic circuits.
PackageSOIC
Current Rating-9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4435A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9A
Current Rating
-9A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
17mR
Dual Supply Voltage
-30V
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.01nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1.7V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
17mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Turn-Off Delay Time
100ns
Turn-On Delay Time
12ns
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS4435A Datasheet
Download the complete datasheet for Onsemi FDS4435A to view detailed technical specifications.
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