P-Channel MOSFET, SOIC package, featuring a -20V drain-source breakdown voltage and 8.5mΩ maximum drain-source on-resistance at a nominal Vgs of -600mV. This surface-mount transistor offers a continuous drain current of 13.5A and a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 175°C and is supplied in 2500-piece tape and reel packaging.
PackageSOIC
Current Rating-13.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4465 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13.5A |
| Current Rating | -13.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 8.5MR |
| Dual Supply Voltage | -20V |
| Element Configuration | Single |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 8.237nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -600mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -20V |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4465 Datasheet
Download the complete datasheet for Onsemi FDS4465 to view detailed technical specifications.
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