Complementary N and P-Channel MOSFETs for half-bridge applications. Features a maximum continuous drain current of 9.3A and a drain-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 18mR at a gate-source voltage of 8V. Packaged in SOIC for surface mounting, with a 2500-piece tape and reel quantity. Operates within a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating9.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4501H technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18MR |
| Fall Time | 25ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.575mm |
| Input Capacitance | 1.958nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.187g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4501H Datasheet
Download the complete datasheet for Onsemi FDS4501H to view detailed technical specifications.
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