N and P-Channel MOSFET, 60V Drain to Source Breakdown Voltage, 4.5A Continuous Drain Current, 55mR Max Drain-Source On Resistance. Features 2.2V Nominal Gate to Source Voltage, 650pF Input Capacitance, and 12ns Fall Time. Packaged in SOIC for surface mount applications, this RoHS compliant component operates from -55°C to 175°C with a 2W Max Power Dissipation.
PackageSOIC
Current Rating4.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4559 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
55MR
Dual Supply Voltage
60V
Fall Time
12ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
650pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.2V
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
2.2V
Turn-Off Delay Time
19ns
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS4559 Datasheet
Download the complete datasheet for Onsemi FDS4559 to view detailed technical specifications.
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