The FDS4885C is a 40V N and P-Channel MOSFET with a continuous drain current of 6A and a maximum power dissipation of 900mW. It features a drain to source breakdown voltage of 40V and a drain to source resistance of 17mR. The device is packaged in a surface mount SOIC package and is RoHS compliant. The FDS4885C operates over a temperature range of -55°C to 150°C and has a fall time of 30ns.
PackageSOIC
Current Rating7.5A
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS4885C technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 30ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 71ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4885C Datasheet
Download the complete datasheet for Onsemi FDS4885C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
