PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS4895C technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.4A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
40V
Fall Time
18ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
410pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Rds On Max
39mR
RoHS Compliant
Yes
Series
PowerTrench®
Turn-Off Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS4895C Datasheet
Download the complete datasheet for Onsemi FDS4895C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.