The FDS4895C is a surface mount N and P-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 40V and a continuous drain current of 4.4A. The device is packaged in a SOIC package and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS4895C technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 18ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 410pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS4895C Datasheet
Download the complete datasheet for Onsemi FDS4895C to view detailed technical specifications.
No datasheet is available for this part.