Dual P-channel MOSFET for surface mount applications. Features 30V drain-source breakdown voltage and 5A continuous drain current. Offers low 55mΩ Rds(on) at a nominal Vgs of -1.7V. Operates across a wide temperature range from -55°C to 175°C. Packaged in SOIC with a maximum power dissipation of 2W.
PackageSOIC
Current Rating-5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS4953 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Current Rating | -5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Element Configuration | Dual |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 528pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -30V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS4953 Datasheet
Download the complete datasheet for Onsemi FDS4953 to view detailed technical specifications.
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