
N-Channel PowerTrench® MOSFET, single element configuration, offering 60V drain-source breakdown voltage and 7A continuous drain current. Features low 28mΩ drain-source on-resistance, 1.107nF input capacitance, and 10ns turn-on delay. Packaged in SOIC for surface mounting, with a maximum power dissipation of 2.5W and operating temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
Onsemi FDS5690 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 28mR |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.107nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.13g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS5690 to view detailed technical specifications.
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