The FDS5692Z is a surface-mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.8A and a drain to source breakdown voltage of 50V. The device features a drain to source resistance of 20mR and a gate to source voltage of 20V. It is lead-free and RoHS compliant, packaged in a tape and reel format with 2500 units per reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS5692Z technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 50V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.025nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS5692Z Datasheet
Download the complete datasheet for Onsemi FDS5692Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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