N-channel MOSFET, 20V Drain-Source Voltage, 21A Continuous Drain Current. Features 4.5mΩ Max Rds On, 5.521nF Input Capacitance, and 55ns Fall Time. Operates from -55°C to 150°C with 3W Max Power Dissipation. Surface mountable in an 8-SOIC package, this RoHS compliant component is designed for efficient power switching applications.
PackageSOIC
Current Rating21A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6162N3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 21A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 5.521nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6162N3 Datasheet
Download the complete datasheet for Onsemi FDS6162N3 to view detailed technical specifications.
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