N-channel MOSFET, 20V Drain-Source Breakdown Voltage, 23A Continuous Drain Current. Features 2.9mΩ Drain-Source On-Resistance at 10V Vgs, 5.521nF Input Capacitance, and 3W Max Power Dissipation. Operates from -55°C to 150°C, with 55ns Fall Time and 85ns Turn-Off Delay Time. Surface mountable in an 8-SOIC package, RoHS compliant.
PackageSOIC
Current Rating23A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6162N7 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 23A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 5.521nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 3.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 85ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6162N7 Datasheet
Download the complete datasheet for Onsemi FDS6162N7 to view detailed technical specifications.
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