N-channel MOSFET, 20V Drain-Source Voltage (Vdss), 16A Continuous Drain Current (ID). Features 6mΩ maximum Drain-Source On-Resistance (Rds On Max) and 2.5W maximum power dissipation. Operates within a temperature range of -55°C to 175°C. Packaged in an 8-pin SOIC N surface-mount case, supplied on tape and reel.
PackageSOIC N
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6572A technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 66ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 5.914nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 102ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6572A Datasheet
Download the complete datasheet for Onsemi FDS6572A to view detailed technical specifications.
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