N-CHANNEL JFET, SOIC package, featuring 30V Drain to Source Breakdown Voltage and 18mR Drain to Source Resistance. This single element transistor offers a continuous drain current of 9.3A and a maximum power dissipation of 2.5W. With a fast 8ns fall time and 23ns turn-off delay, it operates within a temperature range of -55°C to 150°C. Surface mountable and lead-free, this component is supplied on tape and reel.
PackageSOIC
Current Rating9.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6614A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9.3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 18mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 23ns |
| DC Rated Voltage | 30V |
| Weight | 0.13g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6614A Datasheet
Download the complete datasheet for Onsemi FDS6614A to view detailed technical specifications.
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