ONSEMI

FDS6630A

N-Ch MOSFET, 30V, 6.5A, 38mR, SOIC, Logic Level

Onsemi

FDS6630A

Name: FDS6630A Onsemi
Brand: Onsemi
SKU: FDS6630A

N-Ch MOSFET, 30V, 6.5A, 38mR, SOIC, Logic Level

N-Channel Logic Level MOSFET featuring 30V drain-source breakdown voltage and 6.5A continuous drain current. This surface mount component offers a low 38mΩ drain-source on-resistance at a nominal gate-source voltage of 1.7V. It boasts fast switching speeds with a 5ns turn-on delay and 13ns fall time, operating within a -55°C to 150°C temperature range. The SOIC package provides a 2.5W maximum power dissipation.

PackageSOIC

Current Rating6.5A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FDS6630A technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	6.5A
Current Rating	6.5A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	38mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	38mR
Dual Supply Voltage	30V
Element Configuration	Single
Fall Time	13ns
Gate to Source Voltage (Vgs)	20V
Height	1.575mm
Input Capacitance	460pF
Lead Free	Lead Free
Length	4.9mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	1.7V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	38mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerTrench®
Threshold Voltage	1.7V
Turn-Off Delay Time	17ns
Turn-On Delay Time	5ns
DC Rated Voltage	30V
Weight	0.13g
Width	3.9mm