Single N-Channel Logic Level MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 8mΩ Maximum Drain-Source On-Resistance. Features include a 1.8V nominal Gate-Source Voltage, 2.5W maximum power dissipation, and a 150°C maximum operating temperature. This surface-mount component, packaged in SOIC, offers fast switching with 15ns turn-on and 40ns turn-off delay times. It is RoHS compliant and designed for efficient power management applications.
PackageSOIC
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6670A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
8MR
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
2.22nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1.8V
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
30V
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6670A Datasheet
Download the complete datasheet for Onsemi FDS6670A to view detailed technical specifications.
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