
Single N-Channel Logic Level MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 8mΩ Maximum Drain-Source On-Resistance. Features include a 1.8V nominal Gate-Source Voltage, 2.5W maximum power dissipation, and a 150°C maximum operating temperature. This surface-mount component, packaged in SOIC, offers fast switching with 15ns turn-on and 40ns turn-off delay times. It is RoHS compliant and designed for efficient power management applications.
Onsemi FDS6670A technical specifications.
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