The FDS6670S is a 30V N-CHANNEL MOSFET with a continuous drain current of 13.5A and a drain to source resistance of 9mR. It can handle a maximum power dissipation of 2.5W and is packaged in a SOIC case. The MOSFET operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOIC
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6670S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 44ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6670S Datasheet
Download the complete datasheet for Onsemi FDS6670S to view detailed technical specifications.
No datasheet is available for this part.