P-Channel MOSFET, single element configuration, designed for power applications. Features a -30V drain-source breakdown voltage and a continuous drain current of 14.5A. Offers a low drain-source on-resistance of 7.8mΩ at a nominal Vgs of 1.9V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in SOIC for surface mounting, this RoHS compliant component is supplied on a 2500-piece reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6673BZ technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14.5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
7.8MR
Element Configuration
Single
Fall Time
105ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
4.7nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
7.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
-1.9V
Turn-Off Delay Time
225ns
Turn-On Delay Time
14ns
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6673BZ Datasheet
Download the complete datasheet for Onsemi FDS6673BZ to view detailed technical specifications.
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