P-Channel MOSFET, SOIC package, featuring a -30V drain-source breakdown voltage and 14.5A continuous drain current. Offers a low 7.8mΩ Rds On at 10Vgs, with a maximum power dissipation of 2.5W. Designed for surface mounting, this single-element JFET operates across a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 14ns turn-on delay and 105ns fall time.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6673BZ-F085 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 4.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Turn-Off Delay Time | 225ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6673BZ-F085 Datasheet
Download the complete datasheet for Onsemi FDS6673BZ-F085 to view detailed technical specifications.
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