P-Channel MOSFET for power applications, featuring a -30V drain-source breakdown voltage and a continuous drain current of 11A. This surface-mount device offers a low drain-source on-resistance of 10.8mΩ at a nominal gate-source voltage of -2V. With a maximum power dissipation of 2.5W and operating temperatures from -55°C to 150°C, it is suitable for demanding environments. The SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height, is supplied on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi FDS6675BZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21.8MR |
| Dual Supply Voltage | -30V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 2.47nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -2V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6675BZ Datasheet
Download the complete datasheet for Onsemi FDS6675BZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
