P-Channel MOSFET for power applications, featuring a -30V drain-source breakdown voltage and a continuous drain current of 11A. This surface-mount device offers a low drain-source on-resistance of 10.8mΩ at a nominal gate-source voltage of -2V. With a maximum power dissipation of 2.5W and operating temperatures from -55°C to 150°C, it is suitable for demanding environments. The SOIC package, measuring 5mm in length, 4mm in width, and 1.5mm in height, is supplied on a 2500-piece tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6675BZ technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
10.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
21.8MR
Dual Supply Voltage
-30V
Element Configuration
Single
Fall Time
60ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
2.47nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-2V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
13mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
-2V
Turn-Off Delay Time
120ns
Turn-On Delay Time
3ns
Weight
0.13g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6675BZ Datasheet
Download the complete datasheet for Onsemi FDS6675BZ to view detailed technical specifications.
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