N-Channel PowerTrench® SyncFET™ MOSFET, ideal for power switching applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 14.5A. Offers a low drain-source on-resistance of 6mΩ at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W. Packaged in SOIC for surface mounting, this single-element transistor boasts fast switching times with a 10ns turn-on delay and 29ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6676AS technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6MR |
| Element Configuration | Single |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 2.51nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.13g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6676AS Datasheet
Download the complete datasheet for Onsemi FDS6676AS to view detailed technical specifications.
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