P-Channel MOSFET for power applications, featuring a 30V drain-source breakdown voltage and a continuous drain current of 13A. Achieves a low 9mΩ drain-source on-resistance, enabling efficient power switching. Designed for surface mounting in an SOIC package, this single-element transistor offers a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 65ns.
PackageSOIC
Current Rating-13A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS6679 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 3.939nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6679 Datasheet
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