P-channel JFET transistor in SOIC package, featuring a continuous drain current of 13A and a drain-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 9mR, with a maximum power dissipation of 2.5W. Designed for surface mounting, this single-element transistor operates across a temperature range of -55°C to 175°C and includes a fall time of 54ns and turn-off delay time of 92ns.
PackageSOIC
Current Rating-13A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS6679Z technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9.3MR |
| Element Configuration | Single |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.803nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 9mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 92ns |
| DC Rated Voltage | -30V |
| Weight | 0.13g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6679Z Datasheet
Download the complete datasheet for Onsemi FDS6679Z to view detailed technical specifications.
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