N-CHANNEL JFET, SOIC package, designed for surface mount applications. Features a Drain to Source Breakdown Voltage of 30V and a continuous drain current of 11.5A. Offers a low Drain-source On Resistance (Rds On) of 10mR at a nominal Vgs of 1.7V. Includes a fall time of 13ns and a turn-off delay time of 36ns, with a maximum power dissipation of 2.5W. Operates within a temperature range of -55°C to 150°C.
PackageSOIC
Current Rating11.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6680 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11.5A
Current Rating
11.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
17mR
Dual Supply Voltage
30V
Element Configuration
Single
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.07nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.7V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Rds On Max
10mR
Reach SVHC Compliant
No
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
1.7V
Turn-Off Delay Time
36ns
DC Rated Voltage
30V
Weight
0.13g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi FDS6680 Datasheet
Download the complete datasheet for Onsemi FDS6680 to view detailed technical specifications.
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