The FDS6682Q is a N-CHANNEL MOSFET with a continuous drain current of 14A and a drain to source breakdown voltage of 30V. It features a drain to source resistance of 7.5mR and a gate to source voltage of 20V. The device is packaged in a SO package and is available in tape and reel packaging. The FDS6682Q operates over a temperature range of -55°C to 150°C and has a power dissipation of 2.5W.
PackageSO
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6682Q technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.5mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 44ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6682Q Datasheet
Download the complete datasheet for Onsemi FDS6682Q to view detailed technical specifications.
No datasheet is available for this part.