
N-Channel MOSFET, 30V Vdss, 9A continuous drain current, and 11.5mΩ max Rds On. Features 1.2V threshold voltage, 8ns turn-on delay, and 32ns fall time. This surface mount SOIC package offers 1.47W power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
Onsemi FDS6692A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 11.5MR |
| Element Configuration | Single |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.575mm |
| Input Capacitance | 1.61nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 11.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.13g |
| Width | 3.9mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS6692A to view detailed technical specifications.
No datasheet is available for this part.
