N-Channel Fast Switching PowerTrench® MOSFET, SOIC package, featuring 30V Drain to Source Breakdown Voltage and 12A Continuous Drain Current. Offers low 9.1mR Drain to Source Resistance at a nominal 2V Gate to Source Voltage. Designed for surface mount applications with a 2.5W maximum power dissipation and fast switching characteristics including a 10ns fall time. Operates across a wide temperature range from -55°C to 175°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS6694 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.293nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 28ns |
| Weight | 0.13g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6694 Datasheet
Download the complete datasheet for Onsemi FDS6694 to view detailed technical specifications.
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