Dual N-Channel Power Field-Effect Transistor in SOIC package. Features 20V drain-source breakdown voltage and 6.7A continuous drain current. Offers low 22mR drain-source on-resistance at 10V Vgs. Operates from -55°C to 150°C with 2W power dissipation. Surface mountable, supplied on tape and reel.
PackageSOIC
Current Rating6.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6812A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.7A |
| Current Rating | 6.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Element Configuration | Dual |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.082nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 22mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 24ns |
| DC Rated Voltage | 20V |
| Weight | 0.2304g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6812A Datasheet
Download the complete datasheet for Onsemi FDS6812A to view detailed technical specifications.
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