Dual N-Channel MOSFET featuring 20V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 18mΩ maximum drain-source on-resistance at a nominal Vgs of 800mV. Designed for surface mount applications in an SOIC package, this component boasts a 2W power dissipation and operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 23ns.
PackageSOIC
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6890A technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
180mR
Dual Supply Voltage
20V
Element Configuration
Dual
Fall Time
23ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
1.5mm
Input Capacitance
2.13nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
800mV
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Termination
SMD/SMT
Threshold Voltage
800mV
Turn-Off Delay Time
65ns
Turn-On Delay Time
13ns
DC Rated Voltage
20V
Weight
0.187g
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6890A Datasheet
Download the complete datasheet for Onsemi FDS6890A to view detailed technical specifications.
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