Dual N-Channel MOSFET, logic level, PWM optimized for efficient power switching. Features 20V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 18mΩ drain-source on-resistance at a nominal Vgs of 900mV. Packaged in SOIC for surface mounting, with a tape and reel quantity of 2500. Operates across a wide temperature range of -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6892A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18MR |
| Dual Supply Voltage | 20V |
| Element Configuration | Dual |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1.333nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 900mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 20V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6892A Datasheet
Download the complete datasheet for Onsemi FDS6892A to view detailed technical specifications.
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