Dual N-Channel MOSFET, 20V Vds, 7.5A continuous drain current, and 18mΩ Rds On. Features a SOIC package for surface mounting, with a maximum power dissipation of 2W and operating temperatures from -55°C to 150°C. Ideal for applications requiring efficient switching with fast fall times of 8ns and turn-off delay of 25ns. This RoHS compliant component offers a 12V gate-source voltage and 1.286nF input capacitance.
PackageSOIC
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6892AZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.286nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6892AZ Datasheet
Download the complete datasheet for Onsemi FDS6892AZ to view detailed technical specifications.
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