Dual N-Channel Power Field-Effect Transistor featuring 20V Drain to Source Breakdown Voltage and 17mR Drain to Source Resistance. This surface mount device offers a continuous drain current of 8A and a maximum power dissipation of 2W. Designed for efficient switching, it exhibits a fall time of 12ns and a turn-off delay time of 33ns. The SOIC package is suitable for a wide operating temperature range from -55°C to 150°C.
PackageSOIC
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi FDS6894A technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.676nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 17mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | 20V |
| Weight | 0.187g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6894A Datasheet
Download the complete datasheet for Onsemi FDS6894A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
