Dual N-Channel Logic Level MOSFET, SOIC package, featuring 20V drain-to-source breakdown voltage and 17mΩ drain-to-source resistance. This surface mount component offers 8A continuous drain current and 2W power dissipation. Key switching parameters include a 9ns turn-on delay and 13ns fall time. Operating temperature range spans -55°C to 150°C.
PackageSOIC
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FDS6894AZ technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 13ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.455nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| Series | PowerTrench® |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 20V |
| Weight | 0.2304g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi FDS6894AZ Datasheet
Download the complete datasheet for Onsemi FDS6894AZ to view detailed technical specifications.
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