Dual N-Channel MOSFET, logic level, PWM optimized, featuring 30V drain-source breakdown voltage and 6A continuous drain current. Offers a low 28mΩ drain-source on-resistance at a nominal 2V gate-source voltage. This surface-mount component, packaged in SOIC for tape and reel, operates from -55°C to 150°C with a maximum power dissipation of 900mW. Includes fast switching characteristics with 8ns turn-on and 18ns turn-off delay times.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Onsemi FDS6912 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Dual |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 740pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.187g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6912 Datasheet
Download the complete datasheet for Onsemi FDS6912 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.