
Dual N-Channel Logic Level MOSFET, 30V Vds, 6A ID, 28mΩ Rds On. Features PowerTrench® technology for high performance, with a 1.9V threshold voltage and 20V Vgs max. Surface mount SOIC package with 5ns fall time and 8ns turn-on delay. Max power dissipation of 1.6W, operating temperature range of -55°C to 150°C. RoHS compliant, supplied on 2500-piece tape and reel.
Onsemi FDS6912A technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28MR |
| Dual Supply Voltage | 30V |
| Element Configuration | Dual |
| Fall Time | 5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 575pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 30V |
| Weight | 0.187g |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDS6912A to view detailed technical specifications.
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