Dual N-Channel Logic Level MOSFET, 30V, 5.5A continuous drain current, and 38mΩ drain-source on-resistance. Features a 2ns fall time and 6ns turn-on delay time. This surface mount component operates from -55°C to 150°C with a 2W maximum power dissipation. Packaged in SOIC for tape and reel applications.
PackageSOIC
Voltage30V
Current55A
Current Rating5.5A
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Technical Specifications
Onsemi FDS6930B technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.5A
Current
55A
Current Rating
5.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
38mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
38MR
Fall Time
2ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
412pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
38mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerTrench®
Threshold Voltage
1.9V
Turn-Off Delay Time
16ns
Turn-On Delay Time
6ns
Voltage
30V
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FDS6930B Datasheet
Download the complete datasheet for Onsemi FDS6930B to view detailed technical specifications.
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