Dual P-Channel Logic Level MOSFET, surface mountable in an SOIC package. Features a -30V drain-source breakdown voltage and a continuous drain current of 6A. Offers a low 32mΩ drain-source on-resistance at a nominal Vgs of -1.7V. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 18ns. Rated for a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. Packaged in tape and reel for 2500 units.
PackageSOIC
Current Rating-6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FDS6975 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Current Rating | -6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32mR |
| Dual Supply Voltage | -30V |
| Element Configuration | Dual |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.54nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -1.7V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Termination | SMD/SMT |
| Threshold Voltage | -1.7V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -30V |
| Weight | 0.187g |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6975 Datasheet
Download the complete datasheet for Onsemi FDS6975 to view detailed technical specifications.
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