Dual N-Channel Power MOSFET, surface mountable in SOIC package. Features 30V Drain to Source Breakdown Voltage (Vdss) and 30V DC Rated Voltage. Offers low 16mR Drain to Source Resistance (Rds On Max 28mR) and 8.6A Continuous Drain Current (ID). Operates with a 3V Threshold Voltage and 20V Gate to Source Voltage (Vgs). Includes fast switching characteristics with 14ns Fall Time and 34ns Turn-Off Delay Time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6982S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 34ns |
| DC Rated Voltage | 30V |
| Weight | 0.2304g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6982S Datasheet
Download the complete datasheet for Onsemi FDS6982S to view detailed technical specifications.
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