Dual N-Channel PowerTrench® SyncFET™ MOSFET for notebook power supply applications. Features 30V drain-source breakdown voltage and 8.5A continuous drain current. Offers low 20mΩ drain-source on-resistance at a 10V gate-source voltage. Packaged in SOIC for surface mounting, with a 2500-unit tape and reel quantity. Operates from -55°C to 150°C with 2W maximum power dissipation.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6984AS technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 32MR |
| Fall Time | 2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 31mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 22ns |
| Weight | 0.187g |
| Width | 3.99mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDS6984AS Datasheet
Download the complete datasheet for Onsemi FDS6984AS to view detailed technical specifications.
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